GaN-based semiconductor devices and materials
8 works
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13
Papers
219
Citations
8
h-index
8
i10-index
M. R. Holzworth is an academic researcher from University of Florida. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Semiconductor materials and devices & Metal and Thin Film Mechanics. The author has an h-index of 8, co-authored 12 publications.
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